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In the blue and white LED process, direct epitaxial growth of gallium nitride (GaN) on sapphire substrates has always been a problem of lattice mismatch and thermal mismatch. The aluminum nitride (AlN) material has the same lattice structure as GaN, and the lattice of AlN and sapphire material also has a strong matching degree. Therefore, AlN is used as a buffer layer and is placed between the sapphire substrate and GaN. In terms of reducing epitaxial defects and improving the quality of epitaxy, it has been greatly improved by the industry. 
As a high-end equipment and process solution provider in the domestic LED field, North Microelectronics has in-depth technical research and development since 2013, and has carried out in-depth cooperation with domestic first-class chip manufacturers to effectively solve the deposition uniformity of AlN buffer layer through reasonable equipment hardware design. And the reproducibility problem, the Sputter device for preparing a high crystalline quality AlN film buffer layer was successfully developed.
The device can improve the lattice matching degree between the buffer layer and the GaN epitaxial layer, improve the output efficiency of the LED product, broaden the process window of the MOCVD device, and greatly improve the ESD test pass rate of the product; reduce the epitaxial growth time of the MOCVD, and increase the productivity. Reduce the production cost of the entire line. At the same time, the addition of AlN film greatly reduces the warpage in epitaxial growth, greatly improving the yield of the chip, and promoting its application on large-size sapphire substrates. And the device can also be extended to the preparation of AlN films in the field of MEMS and HEMT in 2-8 inch silicon, silicon carbide substrate.
North Microelectronics Co., Ltd. is a high-tech enterprise specializing in the research and development and marketization of high-end semiconductor equipment. Through the accumulation of technology in the field of high-end integrated circuit equipment for more than ten years, it has formed thin film process, etching process, surface material engineering and plasma generation. Core technology advantages based on control, automation and software, ultra-high vacuum, high ionization rate sputtering source, particle control, etc., and through the implementation of technology and product diversification strategies, the establishment of etching machine, PVD and CVD The three major categories of semiconductor equipment products are the core product strategic layout.
This time, the successful development of AlN Sputter equipment, which is completely independent research and development and has independent intellectual property rights, broke the technological monopoly of international big companies. It was released simultaneously with international peers for the first time, and it has won the trust of customers with its superior technical performance. This makes the device the world's first successfully sold AlN Sputter device in the LED field. (This article is the contribution of Northern Microelectronics) 
Northern Microelectronics recently announced AlN thin film buffer layer deposition equipment for patterned or planar sapphire substrates used in GaN-based LED processes. This is the first AlN thin film buffer layer deposition equipment successfully applied to GaN-based LED process in China. It has also completed verification and mass sales of mainstream chip manufacturers in China.