Toshiba expands 650V silicon carbide Schottky barrier diode product lineup

Tokyo- Toshiba Corporation (TOKYO:6502) Semiconductor & Storage Products Corporation announced that it will expand its 650V silicon carbide ( SiC ) Schottky barrier diode ( SBD ) series by adding TO-220F-2L insulation package products. product. The four new products will expand the lineup of the existing TO-220-2L package with 6A, 8A, 10A and 12A. Mass production shipments will start on the same day.

SBD is suitable for a variety of applications, including server power and power conditioners for photovoltaic systems. In addition, it can be used as a replacement for silicon diodes in switching power supplies, which can increase efficiency by 50% ( Toshiba Survey).

SiC power devices offer more stable operation than current silicon devices, even at high voltages and high currents, as they significantly reduce heat dissipation during operation. They meet the diverse industry needs of smaller, more efficient communications equipment and are suitable for a wide range of industrial applications, from servers to inverters.

Main specifications of new products

Existing lineup